HRXRD and micro-CT multiscale investigation of stress and defects induced by a novel packaging design for MEMS sensors

• A unique, holistic X-ray analytical approach enables industrial implementation of MEMS microfab-rication novelty. Unrivaled strain evaluation by HRXRD reduces Si stress-detection threshold below 1 MPa. Impulse Current Bonding as a breakthrough in the field packaging. Significant energy reduction and increased applicability for materials joining. Sub-micron defects analysis materials' bulk bonding interfaces non-destructively high-resolution micro-CT. Advanced methods such diffraction micro CT allow highly precise determination residual stress, volume, lattice defects. Their conjoint exploitation offers powering tool to facilitate novelties microfabrication. The wafer-level packaging represents critical step microfabrication resulting hermetic, defect- stress-free interface. For first time, parameters are investigated related novel wafer-bonding process, namely (ICB), compared standard anodic technology used production. ICB does not induce any relevant stress at interface above limit MPa, determined unrivaled detectability HRXRD. is devoid defects, defined micro-CT studies. thermal budget up 85% bonding, which outlines an outstanding forward reducing footprint. extension other systems glass ceramic or metals makes this promising candidate numerous applications, including design biocompatible devices bio-implants.